Self-organized electronic superlattices in layered materials

Time-Resolved Electronic Relaxation Processes In Self-Organized Quantum Dots

Electronic and Phonon Properties of 2D Layered Materials

............................................................................................................................ iii Chapter

Layered solids: from lubricants to 2D electronic materials*

FIG.1. WSe2 field-effect transistor with conducting NbSe2 leads in side view. Atomic-model representation of the NbSe2/WSe2 interface (top) and schematic structure of the device (bottom). (From Ref. [2]). Transition metal dichalcogenides (TMDs) with the chemical composition MX2 (M=Mo,Ti and X=S,Se) are layered solids known for their excellent behavior as dry lubricants. Interestingly, TMDs have...

Response to ‘‘Comment on ‘Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices’ ’’

In a comment on our recent letter, Yu first pointed out that there was strong alloying between the Ge dots and Si barrier layers because of the appearance of Si–Ge modes as also observed in SiGe alloys. It is correct that the Ge dot samples reported in our letter have some degrees of alloying due to interdiffusion. This was due to the fact that the samples were grown at a high temperature of 60...

Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices

Raman scattering measurements were carried out in self-organized Ge quantum dot superlattices. The samples consisted of 25 periods of Ge quantum dots with different dot sizes sandwiched by 20 nm Si spacers, and were grown using solid-source molecular-beam epitaxy. Optical phonon modes were found to be around 300 cm, and a dependence of the Raman peak frequency on the size of dots was evidenced ...